onsemi · Thyristors & Power Discretes · MPN FGB3056-F085
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| Td(off) | 8.2us |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | 1.3us |
| Operating Temperature | - |
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.55V@5V,8A |
| Gate Charge(Qg) | 20nC |
| Reverse Recovery Time(trr) | 2.4us |
| Turn-On Energy (Eon) | - |
600V TO-263AB Single IGBTs RoHS