onsemi · Thyristors & Power Discretes · MPN FGB3040CS
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| Td(off) | 4.7us |
|---|---|
| Pd - Power Dissipation | 150W |
| Operating Temperature | - |
| Current - Collector(Ic) | 21A |
| Collector-Emitter Breakdown Voltage (Vces) | 430V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.6V@4V,6A |
| Gate Charge(Qg) | 15nC |
| Turn-On Energy (Eon) | - |
150W 21A 430V TO-263-6 Single IGBTs RoHS