onsemi · Thyristors & Power Discretes · MPN FGB20N6S2D
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| Td(off) | 87ns |
|---|---|
| Pd - Power Dissipation | 125W |
| Td(on) | 7.7ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 28A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 30nC |
| Reverse Recovery Time(trr) | 31ns |
| Switching Energy(Eoff) | 58uJ |
125W 28A 600V D2PAK(TO-263) Single IGBTs RoHS