onsemi FGAF20N60SMD

onsemi · Thyristors & Power Discretes · MPN FGAF20N60SMD

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Specifications

Td(off)91ns
Pd - Power Dissipation75W
Td(on)12ns
Operating Temperature-55℃~+175℃
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)30pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V@250uA
Vce Saturation(VCE(sat))2.5V@20A,15V
Reverse Recovery Time(trr)26.7ns
Switching Energy(Eoff)187uJ

Technical details

IGBT FS (Field Stop) 600V 40A 75W Through Hole TO-3PF

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