onsemi · Thyristors & Power Discretes · MPN FGA6560WDF
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| Pd - Power Dissipation | 306W |
|---|---|
| Td(off) | 71ns |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 25.6ns |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 31pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@60mA |
| Vce Saturation(VCE(sat)) | 2.3V@60A,15V |
| Reverse Recovery Time(trr) | 110ns |
| Switching Energy(Eoff) | 520uJ |
306W 120A 650V FS (Field Stop) TO-3PN Single IGBTs RoHS