onsemi · Thyristors & Power Discretes · MPN FGA60N65SMD
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| Pd - Power Dissipation | 600W |
|---|---|
| Td(off) | 104ns |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 18ns |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 85pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@250uA |
| Vce Saturation(VCE(sat)) | 2.5V@60A,15V |
| Collector Cut-Off Current (Ices) | 250uA |
| Reverse Recovery Time(trr) | 47ns |
600W 120A 650V FS (Field Stop) TO-3PN Single IGBTs RoHS