onsemi · Thyristors & Power Discretes · MPN FGA6065ADF
No reviews yet — be the first to review onsemi FGA6065ADF.
| Td(off) | 71ns |
|---|---|
| Pd - Power Dissipation | 306W |
| Td(on) | 25.6ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,60A |
| Gate Charge(Qg) | 84nC |
| Reverse Recovery Time(trr) | 110ns |
| Turn-On Energy (Eon) | 2.46mJ |
306W 120A 650V FS (Field Stop) TO-3P-3 Single IGBTs RoHS