onsemi · Thyristors & Power Discretes · MPN FGA50S110P
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| Pd - Power Dissipation | 300W |
|---|---|
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.1kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 195nC |
300W 50A 1.1kV FS (Field Stop) TO-3PN Single IGBTs RoHS