onsemi · Thyristors & Power Discretes · MPN FGA40N65SMD
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| Td(off) | 92ns |
|---|---|
| Pd - Power Dissipation | 349W |
| Td(on) | 12ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 50pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA |
| Vce Saturation(VCE(sat)) | 2.5V@40A,15V |
| Reverse Recovery Time(trr) | 42ns |
| Switching Energy(Eoff) | 260uJ |
IGBT FS (Field Stop) 650V Through Hole TO-3P