onsemi · Thyristors & Power Discretes · MPN FGA30T65SHD
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| Td(off) | 52.8ns |
|---|---|
| Pd - Power Dissipation | 238W |
| Td(on) | 14.4ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 54.7nC |
| Reverse Recovery Time(trr) | 31.8ns |
| Switching Energy(Eoff) | 167uJ |
238W 60A 650V FS (Field Stop) TO-3P-3 Single IGBTs RoHS