onsemi FGA20S120M

onsemi · Thyristors & Power Discretes · MPN FGA20S120M

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Specifications

Pd - Power Dissipation348W
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)208nC
Turn-On Energy (Eon)-

Technical details

348W 40A 1.2kV FS (Field Stop) TO-3P Single IGBTs RoHS

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