onsemi · Thyristors & Power Discretes · MPN AFGY120T65SPD-B4
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| Pd - Power Dissipation | 882W |
|---|---|
| Td(off) | 102ns |
| Td(on) | 53ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 240A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 243nC |
| Reverse Recovery Time(trr) | 123ns |
| Switching Energy(Eoff) | 3.5mJ |
| Turn-On Energy (Eon) | 6.8mJ |
882W 240A 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS