onsemi · Thyristors & Power Discretes · MPN AFGY120T65SPD
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| Td(off) | 80ns |
|---|---|
| Pd - Power Dissipation | 714W |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Td(on) | 40ns |
| Current - Collector(Ic) | 160A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.05V@15V,120A |
| Gate Charge(Qg) | 125nC |
| Reverse Recovery Time(trr) | 107ns |
| Switching Energy(Eoff) | 3.8mJ |
| Turn-On Energy (Eon) | 6.6mJ |
IGBT FS (Field Stop) 650V 160A 714W Through Hole TO-247-3