onsemi AFGHL75T65SQDT

onsemi · Thyristors & Power Discretes · MPN AFGHL75T65SQDT

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Specifications

Td(off)106ns
Pd - Power Dissipation375W
Td(on)24ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)13pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.4V@75mA
Vce Saturation(VCE(sat))2.1V@75A,15V
Reverse Recovery Time(trr)75ns
Switching Energy(Eoff)1.14mJ
Turn-On Energy (Eon)2.12mJ
Input Capacitance(Cies)4.617nF

Technical details

375W 80A 650V TO-247-3L Single IGBTs RoHS

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