onsemi · Thyristors & Power Discretes · MPN AFGHL75T65SQDC
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| Td(off) | 107ns |
|---|---|
| Pd - Power Dissipation | 375W |
| Td(on) | 24ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11.2pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.4V@75mA |
| Vce Saturation(VCE(sat)) | 2.1V@75A,15V |
| Switching Energy(Eoff) | 1.11mJ |
| Turn-On Energy (Eon) | 1.68mJ |
375W 80A 650V FS (Field Stop) TO-247-3L Single IGBTs RoHS