onsemi AFGHL75T65SQ

onsemi · Thyristors & Power Discretes · MPN AFGHL75T65SQ

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Specifications

Td(off)106ns
Pd - Power Dissipation375W
Td(on)23ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)11.2pF
Input Capacitance(Cies)4.574nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.4V@75mA
Gate Charge(Qg)139nC@15V
Output Capacitance(Coes)289.4pF
Vce Saturation(VCE(sat))2.1V@75A,15V
Switching Energy(Eoff)210uJ

Technical details

375W 80A 650V TO-247-3L Single IGBTs RoHS

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