onsemi · Thyristors & Power Discretes · MPN AFGHL50T65SQDC
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| Td(off) | 89.6ns |
|---|---|
| Pd - Power Dissipation | 238W |
| Td(on) | 17.6ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 9pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.4V@50mA |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V |
| Switching Energy(Eoff) | 96uJ |
| Turn-On Energy (Eon) | 131uJ |
IGBT FS (Field Stop) 650V 100A 238W Through Hole TO-247-3L