onsemi · Thyristors & Power Discretes · MPN AFGHL50T65SQ
No reviews yet — be the first to review onsemi AFGHL50T65SQ.
| Td(off) | 81ns |
|---|---|
| Pd - Power Dissipation | 268W |
| Td(on) | 20ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | - |
| Switching Energy(Eoff) | 460uJ |
| Turn-On Energy (Eon) | 950uJ |
268W 80A 650V FS (Field Stop) TO-247-3L Single IGBTs RoHS