onsemi · Thyristors & Power Discretes · MPN AFGHL40T120RLD
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| Td(off) | 208ns |
|---|---|
| Pd - Power Dissipation | 529W |
| Td(on) | 48ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 48A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 395nC |
| Reverse Recovery Time(trr) | 195ns |
| Switching Energy(Eoff) | 1.2mJ |
529W 48A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS