onsemi · Thyristors & Power Discretes · MPN AFGB40T65SQDN
No reviews yet — be the first to review onsemi AFGB40T65SQDN.
| Td(off) | 75.2ns |
|---|---|
| Pd - Power Dissipation | 238W |
| Td(on) | 17.6ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 9pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@40mA |
| Vce Saturation(VCE(sat)) | 2.1V@40A,15V |
| Reverse Recovery Time(trr) | 131ns |
| Switching Energy(Eoff) | 229uJ |
IGBT 650V 80A 238W Surface Mount D2PAK