onsemi · Thyristors & Power Discretes · MPN AFGB30T65SQDN
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| Td(off) | 63.2ns |
|---|---|
| Pd - Power Dissipation | 220W |
| Td(on) | 14.5ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,30A |
| Gate Charge(Qg) | 56nC |
| Reverse Recovery Time(trr) | 245ns |
| Turn-On Energy (Eon) | - |
220W 60A 650V TO-263 Single IGBTs RoHS