NTE Electronics NTE3323

NTE Electronics · Thyristors & Power Discretes · MPN NTE3323

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Specifications

Td(off)800ns
Pd - Power Dissipation200W
Operating Temperature-
Td(on)-
Current - Collector(Ic)25A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

200W 25A 1.2kV TO-3P Single IGBTs RoHS

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