NTE Electronics NTE3322

NTE Electronics · Thyristors & Power Discretes · MPN NTE3322

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Specifications

Td(off)-
Pd - Power Dissipation170W
Operating Temperature-
Td(on)460ns
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)900V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Reverse Recovery Time(trr)2.5us
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

170W 60A 900V TO-3P Single IGBTs RoHS

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