NTE Electronics NTE3311

NTE Electronics · Thyristors & Power Discretes · MPN NTE3311

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Specifications

Pd - Power Dissipation150W
Td(off)-
Operating Temperature-
Td(on)-
Current - Collector(Ic)25A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@15V,25A
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

150W 25A 600V TO-3P Single IGBTs

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