NCE · Thyristors & Power Discretes · MPN NCE80TD65BT
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| Pd - Power Dissipation | 390W |
|---|---|
| Td(off) | 172ns |
| Td(on) | 19ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 160A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 181pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA |
| Reverse Recovery Time(trr) | 194ns |
| Switching Energy(Eoff) | 1.45mJ |
| Turn-On Energy (Eon) | 1.43mJ |
390W 160A 650V FS (Field Stop) TO-247 Single IGBTs RoHS