NCE NCE80TD60BT

NCE · Thyristors & Power Discretes · MPN NCE80TD60BT

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Specifications

Pd - Power Dissipation390W
Td(off)172ns
Td(on)19ns
Operating Temperature-55℃~+150℃
Current - Collector(Ic)160A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)181pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@1mA
Vce Saturation(VCE(sat))1.7V@80A,15V
Reverse Recovery Time(trr)194ns
Switching Energy(Eoff)1.45mJ

Technical details

390W 160A 600V FS (Field Stop) TO-247 Single IGBTs RoHS

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