MOTOROLA MGW20N120

MOTOROLA · Thyristors & Power Discretes · MPN MGW20N120

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Specifications

Td(off)190ns
Pd - Power Dissipation174W
Td(on)88ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)28A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)62nC
Switching Energy(Eoff)1.65mJ
Turn-On Energy (Eon)-

Technical details

174W 28A 1.2kV TO-247 Single IGBTs

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