Minos MLG75T65FDK

Minos · Thyristors & Power Discretes · MPN MLG75T65FDK

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Specifications

Pd - Power Dissipation468W
Td(off)110ns
Td(on)29ns
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)36pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.5V@1mA
Vce Saturation(VCE(sat))2.6V@75A,15V
Reverse Recovery Time(trr)36ns
Collector Cut-Off Current (Ices)55uA
Switching Energy(Eoff)1.1mJ

Technical details

IGBT FS (Field Stop) 650V 75A 468W Through Hole TO-247

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