Minos MLG75N60FDK

Minos · Thyristors & Power Discretes · MPN MLG75N60FDK

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Specifications

Pd - Power Dissipation468W
Td(off)110ns
Td(on)29ns
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)3.979nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.7V@1mA
Vce Saturation(VCE(sat))2.4V@75A,15V
Reverse Recovery Time(trr)36ns
Switching Energy(Eoff)1.1mJ
Turn-On Energy (Eon)1.25mJ

Technical details

IGBT 600V 150A 468W Through Hole TO-247

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