Minos MLG60T65FDK

Minos · Thyristors & Power Discretes · MPN MLG60T65FDK

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Specifications

Pd - Power Dissipation375W
Td(off)130ns
Td(on)37ns
Current - Collector(Ic)120A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)31pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.7V@1mA
Vce Saturation(VCE(sat))2.1V@60A,15V
Reverse Recovery Time(trr)69ns
Switching Energy(Eoff)1.06mJ
Turn-On Energy (Eon)1.39mJ
Input Capacitance(Cies)3.036nF

Technical details

IGBT 650V 120A Through Hole TO-247

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