Minos MLG60N65FUK

Minos · Thyristors & Power Discretes · MPN MLG60N65FUK

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Specifications

Td(off)123ns
Pd - Power Dissipation375W
Td(on)40ns
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)31pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.7V@1mA
Vce Saturation(VCE(sat))2V@60A,15V
Reverse Recovery Time(trr)52ns
Switching Energy(Eoff)1.5mJ
Turn-On Energy (Eon)1.2mJ

Technical details

IGBT FS (Field Stop) 650V 60A Through Hole TO-247

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