Minos MLG50T65FUK

Minos · Thyristors & Power Discretes · MPN MLG50T65FUK

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Specifications

Pd - Power Dissipation300W
Td(off)182ns
Td(on)22ns
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.5V@1mA
Gate Charge(Qg)106nC@50A,15V
Vce Saturation(VCE(sat))1.6V@50A,15V
Reverse Recovery Time(trr)210ns
Switching Energy(Eoff)1.48mJ
Turn-On Energy (Eon)1.06mJ

Technical details

IGBT FS (Field Stop) 650V 50A 300W Through Hole TO-247

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