Minos · Thyristors & Power Discretes · MPN MLG50T65FDK
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| Td(off) | 88ns |
|---|---|
| Pd - Power Dissipation | 300W |
| Td(on) | 21ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V |
| Vce Saturation(VCE(sat)) | 1.65V |
| Gate Charge(Qg) | 110nC@15V |
| Reverse Recovery Time(trr) | 40ns |
| Collector Cut-Off Current (Ices) | 35uA |
| Switching Energy(Eoff) | 500uJ |
300W 100A 650V FS (Field Stop) TO-247 Single IGBTs RoHS