Minos · Thyristors & Power Discretes · MPN MLG50N60FUK
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| Pd - Power Dissipation | 300W |
|---|---|
| Td(off) | 102ns |
| Td(on) | 22ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 2.109nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@1mA |
| Gate Charge(Qg) | 106nC@50A,15V |
| Vce Saturation(VCE(sat)) | 2V@50A,15V |
| Reverse Recovery Time(trr) | 200ns |
| Switching Energy(Eoff) | 810uJ |
IGBT FS (Field Stop) 600V 100A 300W Through Hole TO-247