Minos MLG50N60FUK

Minos · Thyristors & Power Discretes · MPN MLG50N60FUK

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Specifications

Pd - Power Dissipation300W
Td(off)102ns
Td(on)22ns
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)2.109nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.8V@1mA
Gate Charge(Qg)106nC@50A,15V
Vce Saturation(VCE(sat))2V@50A,15V
Reverse Recovery Time(trr)200ns
Switching Energy(Eoff)810uJ

Technical details

IGBT FS (Field Stop) 600V 100A 300W Through Hole TO-247

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