Minos MLG40T65FDL-W

Minos · Thyristors & Power Discretes · MPN MLG40T65FDL-W

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Specifications

Td(off)112ns
Pd - Power Dissipation300W
Td(on)20ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)24pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.5V
Vce Saturation(VCE(sat))1.45V
Reverse Recovery Time(trr)45ns
Collector Cut-Off Current (Ices)35uA
Switching Energy(Eoff)680uJ

Technical details

300W 80A 650V FS (Field Stop) TO-3P Single IGBTs RoHS

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