Minos MLG40N65FUK

Minos · Thyristors & Power Discretes · MPN MLG40N65FUK

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Specifications

Td(off)90ns
Pd - Power Dissipation298W
Td(on)19ns
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)27pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.8V@1mA
Vce Saturation(VCE(sat))1.95V@40A,15V
Reverse Recovery Time(trr)97ns
Switching Energy(Eoff)380uJ
Turn-On Energy (Eon)600uJ

Technical details

IGBT FS (Field Stop) 650V 40A Through Hole TO-247

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