Minos MLG30T65FUL

Minos · Thyristors & Power Discretes · MPN MLG30T65FUL

No reviews yet — be the first to review Minos MLG30T65FUL.

Specifications

Td(off)90ns
Pd - Power Dissipation300W
Td(on)19ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)2.237nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.7V@1mA
Gate Charge(Qg)110nC@520V
Vce Saturation(VCE(sat))1.95V@40A,15V
Reverse Recovery Time(trr)45ns
Switching Energy(Eoff)380uJ
Turn-On Energy (Eon)600uJ

Technical details

IGBT 650V 80A 300W Through Hole TO-247

Related Thyristors & Power Discretes