Minos MLG25N135RK

Minos · Thyristors & Power Discretes · MPN MLG25N135RK

No reviews yet — be the first to review Minos MLG25N135RK.

Specifications

Td(off)198ns
Pd - Power Dissipation208W
Operating Temperature-55℃~+175℃
Td(on)34ns
Current - Collector(Ic)25A
Collector-Emitter Breakdown Voltage (Vces)1.35kV
Reverse Transfer Capacitance (Cres)43pF
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.5V@1mA
Vce Saturation(VCE(sat))2.5V@25A,15V
Collector Cut-Off Current (Ices)1uA
Input Capacitance(Cies)2.37nF@30V

Technical details

IGBT NPT (Non-Punch Through) 1.35kV 25A 208W Through Hole TO-247

Related Thyristors & Power Discretes