Minos MLG20T65FUL

Minos · Thyristors & Power Discretes · MPN MLG20T65FUL

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Specifications

Pd - Power Dissipation136W
Td(off)75ns
Td(on)15ns
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V@1mA
Vce Saturation(VCE(sat))1.55V@20A,15V
Gate Charge(Qg)44nC@20A,15V
Reverse Recovery Time(trr)150ns
Switching Energy(Eoff)270uJ
Turn-On Energy (Eon)500uJ

Technical details

IGBT FS (Field Stop) 650V 20A 136W Through Hole TO-220

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