Minos FGH40N60SMD

Minos · Thyristors & Power Discretes · MPN FGH40N60SMD

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Specifications

Td(off)90ns
Pd - Power Dissipation298W
Td(on)19ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)27pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.8V@1mA
Output Capacitance(Coes)90pF
Vce Saturation(VCE(sat))1.95V@40A,15V
Reverse Recovery Time(trr)97ns
Switching Energy(Eoff)380uJ

Technical details

298W 80A 600V FS (Field Stop) TO-247 Single IGBTs RoHS

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