MICROCHIP APTGTQ50TA65T3G

MICROCHIP · Thyristors & Power Discretes · MPN APTGTQ50TA65T3G

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Specifications

Pd - Power Dissipation125W
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)3nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+175℃@(Tj)

Technical details

125W 50A 650V IGBT Modules RoHS

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