MICROCHIP · Thyristors & Power Discretes · MPN APTGTQ200SK65T3G
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| Pd - Power Dissipation | 483W |
|---|---|
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 12nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+175℃@(Tj) |
483W 200A 650V IGBT Modules RoHS