MICROCHIP · Thyristors & Power Discretes · MPN APTGT75DH120T3G
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| Pd - Power Dissipation | 357W |
|---|---|
| Current - Collector(Ic) | 110A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 5.34nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,75A |
| Operating Temperature | -40℃~+150℃@(Tj) |
357W 110A 1.2kV FS (Field Stop) IGBT Modules RoHS