MICROCHIP · Thyristors & Power Discretes · MPN APTGT600U170D4G
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| Pd - Power Dissipation | 2.9kW |
|---|---|
| Current - Collector(Ic) | 1.1kA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 51nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃@(Tj) |
2.9kW 1.1kA 1.7kV FS (Field Stop) IGBT Modules RoHS