MICROCHIP APTGLQ600A65T6G

MICROCHIP · Thyristors & Power Discretes · MPN APTGLQ600A65T6G

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Specifications

Td(off)-
Pd - Power Dissipation2kW
Td(on)-
Current - Collector(Ic)770A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)-
Operating Temperature-40℃~+175℃@(Tj)
Vce Saturation(VCE(sat))-
Reverse Recovery Time(trr)-
Switching Energy(Eoff)-

Technical details

2kW 770A 650V FS (Field Stop) IGBT Modules RoHS

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