MICROCHIP APT95GR65B2

MICROCHIP · Thyristors & Power Discretes · MPN APT95GR65B2

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Specifications

Pd - Power Dissipation892W
Td(off)226ns
Operating Temperature-55℃~+150℃@(Tj)
Td(on)29ns
Current - Collector(Ic)208A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)420nC
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

892W 208A 650V NPT (Non-Punch Through) TO-247-3 Single IGBTs RoHS

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