MICROCHIP · Thyristors & Power Discretes · MPN APT95GR65B2
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| Pd - Power Dissipation | 892W |
|---|---|
| Td(off) | 226ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 29ns |
| Current - Collector(Ic) | 208A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 420nC |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
892W 208A 650V NPT (Non-Punch Through) TO-247-3 Single IGBTs RoHS