MICROCHIP APT80GA90LD40

MICROCHIP · Thyristors & Power Discretes · MPN APT80GA90LD40

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Specifications

Td(off)149ns
Pd - Power Dissipation625W
Operating Temperature-
Td(on)18ns
Current - Collector(Ic)145A
Collector-Emitter Breakdown Voltage (Vces)900V
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.1V@15V,47A
Gate Charge(Qg)200nC
Reverse Recovery Time(trr)25ns

Technical details

625W 145A 900V PT (Punch-Through) TO-264 Single IGBTs RoHS

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