MICROCHIP · Thyristors & Power Discretes · MPN APT80GA60B
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| Pd - Power Dissipation | 625W |
|---|---|
| Td(off) | 158ns |
| Td(on) | 23ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 143A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.5V@15V,47A |
| Gate Charge(Qg) | 230nC |
625W 143A 600V PT (Punch-Through) TO-247 Single IGBTs RoHS