MICROCHIP APT75GP120JDQ3

MICROCHIP · Thyristors & Power Discretes · MPN APT75GP120JDQ3

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Specifications

Pd - Power Dissipation543W
Current - Collector(Ic)128A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)7.04nF@25V
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.9V@15V,75A
Operating Temperature-55℃~+150℃@(Tj)

Technical details

543W 128A 1.2kV PT (Punch-Through) IGBT Modules RoHS

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