MICROCHIP APT75GP120B2G

MICROCHIP · Thyristors & Power Discretes · MPN APT75GP120B2G

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Specifications

Pd - Power Dissipation1.042kW
Td(off)163ns
Td(on)20ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.9V@15V,75A
Gate Charge(Qg)320nC

Technical details

1.042kW 100A 1.2kV PT (Punch-Through) TO-247-3 Single IGBTs RoHS

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