MICROCHIP · Thyristors & Power Discretes · MPN APT75GP120B2G
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| Pd - Power Dissipation | 1.042kW |
|---|---|
| Td(off) | 163ns |
| Td(on) | 20ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.9V@15V,75A |
| Gate Charge(Qg) | 320nC |
1.042kW 100A 1.2kV PT (Punch-Through) TO-247-3 Single IGBTs RoHS